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Bibliographic data Document CN000110753996A (Pages: 16)

INID	Criterion	Field	Contents
54	Title	TI	[EN] POWER ELECTRONICS MODULE
71/73	Applicant/owner	PA	AUDI AG
72	Inventor	IN	APELSMEIER ANDREAS ; ASAM JOHANN
22/96	Application date	AD	Apr 11, 2018
21	Application number	AN	201880038531
	Country of application	AC	CN
	Publication date	PUB	Feb 4, 2020
33 31 32	Priority data	PRC PRN PRD	EP 2018059347 Apr 11, 2018
33 31 32		PRC PRN PRD	EP 17166088 Apr 11, 2017
51	IPC main class	ICM	H01L 23/49 (2006.01)
51	IPC secondary class	ICS	H01L 23/34 (2006.01) H01L 23/492 (2006.01) H01L 25/07 (2006.01) H01L 25/11 (2006.01)
	IPC additional class	ICA
	IPC index class	ICI
	Cooperative patent classification	CPC	H01L 2223/6627 H01L 2224/2612 H01L 2224/29339 H01L 2224/29582 H01L 2224/32014 H01L 2224/37147 H01L 2224/40095 H01L 2224/41174 H01L 2224/48155 H01L 2224/4824 H01L 2224/4826 H01L 2224/48491 H01L 2224/73221 H01L 2224/83101 H01L 2224/83447 H01L 2224/83801 H01L 2224/83825 H01L 2224/8384 H01L 2224/84447 H01L 2224/8484 H01L 23/34 H01L 23/492 H01L 23/49822 H01L 23/49833 H01L 24/20 H01L 24/29 H01L 24/37 H01L 24/40 H01L 24/41 H01L 24/48 H01L 25/071 H01L 25/074 H01L 25/112 H01L 25/117 H01L 2924/00014 H01L 2924/09701 H01L 2924/10272 H01L 2924/1203 H01L 2924/1301 H01L 2924/13055 H01L 2924/13091 H01L 2924/15787 H01L 2924/19104
	MCD main class	MCM	H01L 23/49 (2006.01)
	MCD secondary class	MCS	H01L 23/34 (2006.01) H01L 23/492 (2006.01) H01L 25/07 (2006.01) H01L 25/11 (2006.01)
	MCD additional class	MCA
57	Abstract	AB	[EN] A power electronics module (10) comprises a substrate (12) with a substrate metallization layer (14), which is separated into conducting areas (16, 18) for providing conducting paths for the power electronics module (10); a semiconductor switch chip (26) bonded with a first power electrode (28) to a first conducting area (18) of the substrate metallization layer (14); a conductor plate (34, 34') bonded to a second power electrode (30) of the semiconductor switch chip (26) opposite to the first power electrode (28); and a gate conductor (40, 40') bonded to a gate electrode (32) of the semiconductor switch chip (26) besides the second power electrode (30); wherein the conductor plate (34, 34') extends to a second conducting area (18) of the substrate metallization layer (14) and the gate conductor (40, 40') runs through an opening (38) in the conductor plate (34, 34') arranged above the gate electrode (32).
56	Cited documents identified in the search	CT	CN000205984938U DE102012204159A1 EP000000513410A1 US020120223415A1
56	Cited documents indicated by the applicant	CT
56	Cited non-patent literature identified in the search	CTNP
56	Cited non-patent literature indicated by the applicant	CTNP
	Citing documents		Determine documents
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	Search file IPC	ICP	H01L 23/498