| 54 |
Title |
TI |
[EN] Power semiconductor module with short-circuit failure mode |
| 71/73 |
Applicant/owner |
PA |
DANFOSS SILICON POWER GMBH
|
| 72 |
Inventor |
IN |
BECKER MARTIN
;
EISELE RONALD
;
KOCK MATHIAS
;
LUTZ JOSEF
;
OSTERWALD FRANK
;
RUDZKI JACEK
|
| 22/96 |
Application date |
AD |
Oct 14, 2015 |
| 21 |
Application number |
AN |
201580069840 |
|
Country of application |
AC |
CN |
|
Publication date |
PUB |
Aug 29, 2017 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
102014221687
Oct 24, 2014
|
33
31
32 |
PRC
PRN
PRD |
EP
2015073745
Oct 14, 2015
|
| 51 |
IPC main class |
ICM |
H01L 23/62
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 2224/45015
H01L 2224/45124
H01L 2224/45147
H01L 2224/4847
H01L 2224/48491
H01L 2224/85423
H01L 2224/85439
H01L 2224/85444
H01L 2224/85447
H01L 23/62
H01L 24/04
H01L 24/07
H01L 24/45
H01L 24/48
H01L 2924/00014
H01L 2924/13055
|
|
MCD main class |
MCM |
H01L 23/62
(2006.01)
|
|
MCD secondary class |
MCS |
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] A description is given of a power semiconductor module (10) which can be transferred from a normal operating mode to an explosion-free robust short-circuit failure mode. Said power semiconductor module (10) comprises a power semiconductor (1) having metallizations (3) which form potential areas and are separated by insulations and passivations on the top side (2) of said power semiconductor. Furthermore, an electrically conductive connecting layer is provided, on which at least one metal shaped body (4) which has a low lateral electrical resistance and is significantly thicker than the connecting layer is arranged, said at least one metal shaped body being applied by sintering of the connecting layer such that said metal shaped body is cohesively connected to the respective potential area. The metal shaped body (4) is embodied and designed with means for laterally homogenizing a current flowing through it in such a way that a lateral current flow component (5) is maintained until this module switches off in order to avoid an explosion, wherein the metal shaped body (4) has connections (6) having high-current capability. A transition from the operating mode to the robust failure mode then takes place in an explosion-free manner by virtue of the fact that the connections (6) are contact-connected and dimensioned in such a way that in the case of overload currents of greater than a multiple of the rated current of the power semiconductor (1), the operating mode changes to the short-circuit failure mode with connections (6) remaining on the metal shaped body (4) in an explosion-free manner without the formation of arcs. |
| 56 |
Cited documents identified in the search |
CT |
CN000001511346A
CN000101842893A
EP000002230689A1
US000006215185B1
US000006735065B2
US020040166727A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
No results
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
|
