54 |
Titel |
TI |
[EN] Device for temporarily carrying current of energy transmission or distribution equipment according to the needs |
71/73 |
Anmelder/Inhaber |
PA |
GE ENERGY POWER CONVERSION TECHNOLOGY LTD
|
72 |
Erfinder |
IN |
GESKE MARTIN
;
JAKOB ROLAND
;
KOWALSKY JENS
;
LUTZ JOSEF
|
22/96 |
Anmeldedatum |
AD |
10.02.2017 |
21 |
Anmeldenummer |
AN |
201710234358 |
|
Anmeldeland |
AC |
CN |
|
Veröffentlichungsdatum |
PUB |
18.08.2017 |
33 31 32 |
Priorität |
PRC PRN PRD |
EP
16155025
20160210
|
51 |
IPC-Hauptklasse |
ICM |
H02M 1/34
(2007.01)
|
51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H02H 7/1213
H02J 3/36
H02M 1/08
H02M 1/088
H02M 1/32
H02M 1/34
H02M 5/293
H02M 5/2932
H03K 17/06
H03K 17/127
H03K 2017/066
Y02E 10/76
|
|
MCD-Hauptklasse |
MCM |
H02M 1/34
(2007.01)
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
57 |
Zusammenfassung |
AB |
[EN] Provided is a device for switching the current from a first line branch to another second line branch according to the needs, including a plurality of power semiconductor switching elements arranged in series and/or parallel to each other in the second line branch and a driving unit for driving the plurality of power semiconductor switching elements. The driving unit is configured to apply an increased driving voltage (which is larger than a maximum allowable driving voltage specified for continuous operation) to the plurality of power semiconductor switching elements to electrically connect or hold the plurality of power semiconductor switching elements, and causing their current at least corresponding to twice the rated operating current. The driving unit is further configured to turn off the plurality of power semiconductor switching elements by turning off the driving voltage after the short on-duration during the increased passing current conduction of the plurality of power semiconductor switching elements. Thus, the device can be designed for higher power in operation, or the semiconductor area and structure size of the device can be reduced at a given operating power. |
56 |
Entgegengehaltene Patentdokumente/Zitate, in Recherche ermittelt |
CT |
CN000101253677A CN000102142677A CN000102823121A
|
56 |
Entgegengehaltene Patentdokumente/Zitate, vom Anmelder genannt |
CT |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, in Recherche ermittelt |
CTNP |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
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Dokumente ermitteln
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Sequenzprotokoll |
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Prüfstoff-IPC |
ICP |
H02J 3/36
H02J 3/38
|