| 54 |
Titel |
TI |
[EN] Power Semiconductor Device with Improved Stability and Method for Producing the Same |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG
|
| 72 |
Erfinder |
IN |
ERIC PERTERMANN
;
HANS-JOACHIM SCHULZE
;
JOSEF LUTZ
|
| 22/96 |
Anmeldedatum |
AD |
15.12.2015 |
| 21 |
Anmeldenummer |
AN |
201510929113 |
|
Anmeldeland |
AC |
CN |
|
Veröffentlichungsdatum |
PUB |
22.06.2016 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102014118664
20141215
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/739
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 29/08
(2006.01)
H01L 29/861
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H10D 12/441
H10D 12/481
H10D 62/125
H10D 62/127
H10D 62/142
H10D 8/00
H10D 8/041
H10D 8/053
H10D 8/70
H10D 8/80
H10D 89/611
|
|
MCD-Hauptklasse |
MCM |
H01L 29/739
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 29/08
(2006.01)
H01L 29/861
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A power semiconductor device includes a first contact, a second contact, and a semiconductor volume disposed between the first contact and the second contact. The semiconductor volume includes an n-doped field stop layer configured to spatially delimit an electric field that in the semiconductor volume during operation of the power semiconductor device, a heavily p-doped zone and a neighboring heavily n-doped zone, which together form a tunnel diode. The tunnel diode is located in the vicinity of, or adjacent to, or within the field stop layer. The tunnel diode is configured to provide protection against damage to the device due to a rise of an electron flow in an abnormal operating condition, by the fast provision of holes. Further, a method for producing such devices is provided. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US020140001528A1
US020140334212A1
WO002012046329A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
CN000108520857A
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 29/06
|
