| 54 |
Title |
TI |
[EN] Power Semiconductor Device with Improved Stability and Method for Producing the Same |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AG
|
| 72 |
Inventor |
IN |
ERIC PERTERMANN
;
HANS-JOACHIM SCHULZE
;
JOSEF LUTZ
|
| 22/96 |
Application date |
AD |
Dec 15, 2015 |
| 21 |
Application number |
AN |
201510929113 |
|
Country of application |
AC |
CN |
|
Publication date |
PUB |
Jun 22, 2016 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
102014118664
20141215
|
| 51 |
IPC main class |
ICM |
H01L 29/739
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 29/08
(2006.01)
H01L 29/861
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 27/0255
H01L 29/0688
H01L 29/0696
H01L 29/0834
H01L 29/66121
H01L 29/66151
H01L 29/7395
H01L 29/7397
H01L 29/861
H01L 29/87
H01L 29/88
|
|
MCD main class |
MCM |
H01L 29/739
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 29/08
(2006.01)
H01L 29/861
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] A power semiconductor device includes a first contact, a second contact, and a semiconductor volume disposed between the first contact and the second contact. The semiconductor volume includes an n-doped field stop layer configured to spatially delimit an electric field that in the semiconductor volume during operation of the power semiconductor device, a heavily p-doped zone and a neighboring heavily n-doped zone, which together form a tunnel diode. The tunnel diode is located in the vicinity of, or adjacent to, or within the field stop layer. The tunnel diode is configured to provide protection against damage to the device due to a rise of an electron flow in an abnormal operating condition, by the fast provision of holes. Further, a method for producing such devices is provided. |
| 56 |
Cited documents identified in the search |
CT |
US020140001528A1
US020140334212A1
WO002012046329A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 29/06
|
