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Document CN000105702719A (Pages: 15)

Bibliographic data Document CN000105702719A (Pages: 15)
INID Criterion Field Contents
54 Title TI [EN] Power Semiconductor Device with Improved Stability and Method for Producing the Same
71/73 Applicant/owner PA INFINEON TECHNOLOGIES AG
72 Inventor IN ERIC PERTERMANN ; HANS-JOACHIM SCHULZE ; JOSEF LUTZ
22/96 Application date AD Dec 15, 2015
21 Application number AN 201510929113
Country of application AC CN
Publication date PUB Jun 22, 2016
33
31
32
Priority data PRC
PRN
PRD
DE
102014118664
20141215
51 IPC main class ICM H01L 29/739 (2006.01)
51 IPC secondary class ICS H01L 29/08 (2006.01)
H01L 29/861 (2006.01)
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H10D 12/441
H10D 12/481
H10D 62/125
H10D 62/127
H10D 62/142
H10D 8/00
H10D 8/041
H10D 8/053
H10D 8/70
H10D 8/80
H10D 89/611
MCD main class MCM H01L 29/739 (2006.01)
MCD secondary class MCS H01L 29/08 (2006.01)
H01L 29/861 (2006.01)
MCD additional class MCA
57 Abstract AB [EN] A power semiconductor device includes a first contact, a second contact, and a semiconductor volume disposed between the first contact and the second contact. The semiconductor volume includes an n-doped field stop layer configured to spatially delimit an electric field that in the semiconductor volume during operation of the power semiconductor device, a heavily p-doped zone and a neighboring heavily n-doped zone, which together form a tunnel diode. The tunnel diode is located in the vicinity of, or adjacent to, or within the field stop layer. The tunnel diode is configured to provide protection against damage to the device due to a rise of an electron flow in an abnormal operating condition, by the fast provision of holes. Further, a method for producing such devices is provided.
56 Cited documents identified in the search CT US020140001528A1
US020140334212A1
WO002012046329A1
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
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Search file IPC ICP H01L 29/06