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Document CN000105580085A (Pages: 24)

Bibliographic data Document CN000105580085A (Pages: 24)
INID Criterion Field Contents
54 Title TI [EN] Thyristor memory cell integrated circuit
71/73 Applicant/owner PA OPEL SOLAR INC ; UNIV CONNECTICUT
72 Inventor IN TAYLOR GEOFF W
22/96 Application date AD Jul 18, 2014
21 Application number AN 201480042157
Country of application AC CN
Publication date PUB May 11, 2016
33
31
32
Priority data PRC
PRN
PRD
US
201313951578
Jul 26, 2013
33
31
32
PRC
PRN
PRD
US
2014047128
Jul 18, 2014
51 IPC main class ICM G11C 11/39 (2006.01)
51 IPC secondary class ICS
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC G11C 11/39
G11C 13/0004
G11C 13/0097
G11C 14/0045
G11C 14/009
H10B 63/32
H10B 63/80
H10N 70/231
H10N 70/826
MCD main class MCM G11C 11/39 (2006.01)
MCD secondary class MCS
MCD additional class MCA
57 Abstract AB [EN] A semiconductor memory device including an array of memory cells (MC) formed on a substrate each realized from a load element and thyristor that define a switchable current path whose state represents a volatile bit value stored by the MC. At least one word line corresponding to a respective row of the array is formed on the substrate and coupled to MC current paths for the corresponding row. Bit lines corresponding to respective columns of the array are formed on the substrate and can be coupled to a modulation doped QW interface of the MC thyristors for the corresponding column. Circuitry is configured to apply electrical signal to the word line(s) in order to generate current that programs phase change material of the MC load elements into one of a high or low resistive state according to state of the current path of the MCs for non-volatile backup and restore purposes.
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56 Cited non-patent literature indicated by the applicant CTNP
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