| 54 |
Titel |
TI |
[EN] Optoelectronic integrated circuit |
| 71/73 |
Anmelder/Inhaber |
PA |
OPEL SOLAR INC
;
UNIV CONNECTICUT
|
| 72 |
Erfinder |
IN |
TAYLOR GEOFF W
|
| 22/96 |
Anmeldedatum |
AD |
11.06.2014 |
| 21 |
Anmeldenummer |
AN |
201480034881 |
|
Anmeldeland |
AC |
CN |
|
Veröffentlichungsdatum |
PUB |
02.03.2016 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
US
201313921311
19.06.2013
|
33
31
32 |
PRC
PRN
PRD |
US
2014041920
11.06.2014
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/15
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
B82Y 10/00
G02B 6/125
H01L 21/0259
H01S 5/026
H01S 5/06203
H01S 5/18358
H01S 5/309
H01S 5/34
H01S 5/3412
H10D 30/475
H10D 48/383
H10D 62/118
H10D 62/125
H10D 62/812
H10D 62/814
H10D 62/8164
H10F 39/10
H10F 71/00
H10F 77/1433
H10F 77/146
H10H 20/01
H10H 20/812
H10H 29/10
|
|
MCD-Hauptklasse |
MCM |
H01L 29/15
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
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