| 54 |
Title |
TI |
[EN] FAILURE STRUCTURE IN SEMICONDUCTOR DEVICE |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Inventor |
IN |
BASLER THOMAS, DE
;
HUERNER ANDREAS, DE
;
LEENDERTZ CASPAR, DE
;
PETERS DETHARD, DE
|
| 22/96 |
Application date |
AD |
Nov 27, 2019 |
| 21 |
Application number |
AN |
201916697580 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
May 27, 2021 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
|
| 51 |
IPC main class |
ICM |
H01L 23/525
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 23/62
(2006.01)
H01L 29/16
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 23/525
H01L 23/5252
H01L 23/5256
H01L 23/62
H01L 29/1608
|
|
MCD main class |
MCM |
H01L 23/525
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 23/62
(2006.01)
H01L 29/16
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] A semiconductor device is provided. In an embodiment, the semiconductor device comprises a control region, a first power region, a second power region, an isolation region and/or a short circuit structure. The control region comprises a control terminal. The first power region comprises a first power terminal. The second power region comprises a second power terminal. The isolation region is between the control region and the first power region. The short circuit structure extends from the first power region, through the isolation region, to the control region. The short circuit structure is configured to form a low-resistive connection between the control region and the first power region during a failure state of the semiconductor device. |
| 56 |
Cited documents identified in the search |
CT |
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 23/525
H01L 23/62
|
