Bibliographic data

Document US020080237701A1 (Pages: 6)

Bibliographic data Document US020080237701A1 (Pages: 6)
INID Criterion Field Contents
54 Title TI [EN] SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT
71/73 Applicant/owner PA INFINEON TECHNOLOGIES AUSTRIA, AT
72 Inventor IN RUEB MICHAEL, AT ; SCHMITT MARKUS, DE ; TOLKSDORF CAROLIN, DE ; WILLMEROTH ARMIN, DE
22/96 Application date AD Oct 3, 2007
21 Application number AN 86666207
Country of application AC US
Publication date PUB Oct 2, 2008
33
31
32
Priority data PRC
PRN
PRD
DE
102006047489
20061005
51 IPC main class ICM H01L 29/76 (2006.01)
51 IPC secondary class ICS H01L 21/425 (2006.01)
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 29/0634
H01L 29/0696
H01L 29/1095
H01L 29/402
H01L 29/7811
MCD main class MCM H01L 29/76 (2006.01)
MCD secondary class MCS H01L 21/425 (2006.01)
MCD additional class MCA
57 Abstract AB [EN] A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number Ns of charge carriers present in a volume Vs between two charge compensation regions that are adjacent in a direction perpendicular to the edge, and for the number Np of charge carriers present in a volume Vp between two charge compensation regions that are adjacent in a direction parallel to the edge, Np>Ns holds true.
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56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
Citing documents Determine documents
Sequence listings
Search file IPC ICP H01L 21/425
H01L 29/06 E
H01L 29/78