| 54 |
Title |
TI |
[EN] METHOD FOR FABRICATING A TRENCH STRUCTURE, AND A SEMICONDUCTOR ARRANGEMENT COMPRISING A TRENCH STRUCTURE |
| 71/73 |
Applicant/owner |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Inventor |
IN |
HIRLER FRANZ, DE
;
KAUTZSCH THORALF, DE
;
MAUDER ANTON, DE
;
RUEB MICHAEL, AT
;
SCHULZE HANS-JOACHIM, DE
;
STRACK HELMUT, DE
;
WILLMEROTH ARMIN, DE
|
| 22/96 |
Application date |
AD |
Aug 6, 2007 |
| 21 |
Application number |
AN |
83415407 |
|
Country of application |
AC |
US |
|
Publication date |
PUB |
Mar 20, 2008 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
102006037510
20060810
|
| 51 |
IPC main class |
ICM |
H01L 29/94
(2006.01)
|
| 51 |
IPC secondary class |
ICS |
H01L 21/76
(2006.01)
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 21/3247
H01L 21/76224
H01L 29/0653
H01L 29/407
H01L 29/66621
H01L 29/7803
H01L 29/7804
|
|
MCD main class |
MCM |
H01L 29/94
(2006.01)
|
|
MCD secondary class |
MCS |
H01L 21/76
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure. |
| 56 |
Cited documents identified in the search |
CT |
US000007157378B2
US020070243692A1
US020080230916A1
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 21/762 T
|
