Bibliographic data

Document US020060118852A1 (Pages: 15)

Bibliographic data Document US020060118852A1 (Pages: 15)
INID Criterion Field Contents
54 Title TI [EN] Process for patterning capacitor structures in semiconductor trenches
71/73 Applicant/owner PA RUEB MICHAEL
72 Inventor IN RUEB MICHAEL, AT
22/96 Application date AD Nov 9, 2005
21 Application number AN 27028205
Country of application AC US
Publication date PUB Jun 8, 2006
33
31
32		 Priority data PRC
PRN
PRD		 DE
102004054352
20041109
51 IPC main class ICM H01L 29/94 (2006.01)
51 IPC secondary class ICS
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 29/66181
H10B 12/0387
MCD main class MCM H01L 29/94 (2006.01)
MCD secondary class MCS
MCD additional class MCA
57 Abstract AB [EN] A process for producing structures in a semiconductor zone, has the steps of a) producing a trench ( 2 ) in the semiconductor zone ( 18 ), b) filling the trench with a photoresist ( 19 ), and c) exposing the photoresist ( 19 ) using ion beams ( 20 ), d) developing the photoresist ( 19 ). The energy density and ion dose for the ion beams ( 20 ) are selected in such a way that the photoresist ( 19 ) is only chemically changed at defined depths, so as to produce two regions, in the first region ( 21 ) of which the photoresist has been chemically changed at the defined depths by the ion beams ( 20 ), and in the second region of which the photoresist has been left chemically unchanged, so that during the developing step the photoresist is removed in precisely one of the two regions.
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56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
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Search file IPC ICP H01L 27/08 CF
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