54 |
Titel |
TI |
[EN] Method for producing a buried n-doped semiconductor zone in a semiconductor body and semiconductor component |
71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
;
LUTZ JOSEF, DE
;
NIEDERNOSTHEIDE FRANZ-JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
;
SIEMIENIEC RALF, DE
|
72 |
Erfinder |
IN |
LUTZ JOSEF, DE
;
NIEDERNOSTHEIDE FRANZ-JOSEF, DE
;
SCHULZE HANS-JOACHIM, DE
;
SIEMIENIEC RALF, DE
|
22/96 |
Anmeldedatum |
AD |
08.03.2010 |
21 |
Anmeldenummer |
AN |
71948710 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
24.01.2012 |
33 31 32 |
Priorität |
PRC PRN PRD |
DE
102004039208
12.08.2004
|
33 31 32 |
PRC PRN PRD |
US
20187405
11.08.2005
|
51 |
IPC-Hauptklasse |
ICM |
H01L 21/322
(2006.01)
|
51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 21/263
H01L 21/26506
H01L 21/266
H01L 29/0878
H01L 29/66333
H01L 29/66712
H01L 29/7395
|
|
MCD-Hauptklasse |
MCM |
H01L 21/322
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
57 |
Zusammenfassung |
AB |
[EN] A method for producing a buried n-doped semiconductor zone in a semiconductor body. In one embodiment, the method includes producing an oxygen concentration at least in the region to be doped in the semiconductor body. The semiconductor body is irradiated via one side with nondoping particles for producing defects in the region to be doped. A thermal process is carried out. The invention additionally relates to a semiconductor component with a field stop zone. |
56 |
Entgegengehaltene Patentdokumente/Zitate, in Recherche ermittelt |
CT |
US020010030331A1
|
56 |
Entgegengehaltene Patentdokumente/Zitate, vom Anmelder genannt |
CT |
DE000010053445A1 DE000010207522A1 DE000010240107A1 DE000010243758A1 DE000010245089A1 EP000000594049A1 EP000000969501A1 US000004379306A US000006351024B1 US000006475876B2 US000006610572B1 US020030054641A1
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, in Recherche ermittelt |
CTNP |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, vom Anmelder genannt |
CTNP |
"13-kV Rectifiers: Studies on Diodes and Asymmetric Thyristors", F.J. Niedernostheide, et al., IEEE 2003 (4 pgs.). 1; Ammerlaan: "Thermal double donors in c-Si", Jan. 1998, pp. 663-668. 1; D. Widmann et al., Technologie hochintegrierter Schaltungen, S. Auflage, Berlin [a.u.]:Springer, 1996 (Halbleiter-Elektronik 19), pp. 42-43; ISBN: 3-540-59357-8. 1; Heywang et al.: "Halbleiter-Elektronik; Geleitwort der Herausgeber", 3.2 The monocrystalline silicon wafers, 1996. 1; P. Taylor, "Thyristor Design and Realization", John Wiley & Sons, 1992, pp. 162-163. 1
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/322
|