Bibliographic data

Document EP000001114466A1 (Pages: 1)

Bibliographic data Document EP000001114466A1 (Pages: 1)
INID Criterion Field Contents
54 Title TI [DE] HOCHSPANNUNGS-HALBLEITERBAUELEMENT
[EN] HIGH-VOLTAGE SEMICONDUCTOR COMPONENT
[FR] ELEMENT SEMI-CONDUCTEUR HAUTE TENSION
71/73 Applicant/owner PA SIEMENS AG, DE
72 Inventor IN AHLERS DIRK, DE ; DEBOY GERALD, DE ; GRAF HEIMO, AT ; RUEB MICHAEL, AT ; STENGL JENS-PEER, DE ; STRACK HELMUT, DE ; WEBER HANS, DE
22/96 Application date AD Apr 22, 1999
21 Application number AN 99929017
Country of application AC EP
Publication date PUB Jul 11, 2001
33
31
32
Priority data PRC
PRN
PRD
DE
19840032
Sep 2, 1998
33
31
32
PRC
PRN
PRD
DE
9901218
Apr 22, 1999
51 IPC main class ICM H01L 29/78
51 IPC secondary class ICS H01L 21/336
H01L 29/06
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 29/0634
H01L 29/0696
H01L 29/1095
H01L 29/41766
H01L 29/4232
H01L 29/4236
H01L 29/4238
H01L 29/772
H01L 29/7801
H01L 29/7802
H01L 29/7811
H01L 29/7816
H01L 29/7825
MCD main class MCM
MCD secondary class MCS H01L 21/336 (2006.01)
H01L 29/06 (2006.01)
H01L 29/78 (2006.01)
MCD additional class MCA H01L 29/417 (2006.01)
H01L 29/423 (2006.01)
57 Abstract AB [EN] A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.
56 Cited documents identified in the search CT
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
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Search file IPC ICP H01L 29/80