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Bibliographic data Document DE102004063991B4 (Pages: 19)
INID	Criterion	Field	Contents
54	Title	TI	[DE] Verfahren zur Herstellung von dotierten Halbleitergebieten in einem Halbleiterk�rper eines lateralen Trenchtransistors
71/73	Applicant/owner	PA	Infineon Technologies AG, 85579 Neubiberg, DE
72	Inventor	IN	Hirler, Franz, Dr., 84424 Isen, DE ; Meyer, Thorsten, Dr., 81545 M�nchen, DE ; R�b, Michael, Dr., Faak am See, AT ; Schmitt, Markus, 81373 M�nchen, DE ; Sch�ffer, Carsten, Sattendorf, AT ; Tolksdorf, Carolin, 82327 Tutzing, DE ; Wahl, Uwe, Dr.-Ing., 80798 M�nchen, DE ; Willmeroth, Armin, 86163 Augsburg, DE
22/96	Application date	AD	Oct 29, 2004
21	Application number	AN	102004063991
	Country of application	AC	DE
	Publication date	PUB	Jun 18, 2009
33 31 32	Priority data	PRC PRN PRD	DE 102004052643 20041029
51	IPC main class	ICM	H01L 21/336 (2006.01)
51	IPC secondary class	ICS	H01L 29/78 (2006.01)
	IPC additional class	ICA
	IPC index class	ICI
	Cooperative patent classification	CPC	H01L 21/26586 H01L 29/0696 H01L 29/1045 H01L 29/1095 H01L 29/41758 H01L 29/4236 H01L 29/42368 H01L 29/66666 H01L 29/66689 H01L 29/66704 H01L 29/78 H01L 29/7825
	MCD main class	MCM	H01L 21/336 (2006.01)
	MCD secondary class	MCS	H01L 29/78 (2006.01)
	MCD additional class	MCA
57	Abstract	AB
56	Cited documents identified in the search	CT	DE000019743342C2
56	Cited documents indicated by the applicant	CT
56	Cited non-patent literature identified in the search	CTNP
56	Cited non-patent literature indicated by the applicant	CTNP
	Citing documents		Determine documents
	Sequence listings
	Search file IPC	ICP	H01L 21/336 H01L 29/06 H01L 29/10 H01L 29/417 H01L 29/423 H01L 29/78