Bibliographic data

Document DE000019843959A1 (Pages: 18)

Bibliographic data Document DE000019843959A1 (Pages: 18)
INID Criterion Field Contents
54 Title TI [DE] Verfahren zum Herstellen eines Halbleiterbauelements
71/73 Applicant/owner PA Siemens AG, 80333 München, DE
72 Inventor IN Deboy, Gerald, Dr., 82008 Unterhaching, DE ; Friza, Wolfgang, Dipl.-Ing., Villach, AT ; Häberlen, Oliver, Dr., Villach, AT ; Rüb, Michael, Dr., Villach, AT ; Strack, Helmut, Dr., 80804 München, DE
22/96 Application date AD Sep 24, 1998
21 Application number AN 19843959
Country of application AC DE
Publication date PUB Apr 6, 2000
33
31
32
Priority data PRC
PRN
PRD


51 IPC main class ICM H01L 21/334
51 IPC secondary class ICS H01L 21/328
IPC additional class ICA
IPC index class ICI
Cooperative patent classification CPC H01L 21/26586
H01L 29/0619
H01L 29/0623
H01L 29/0634
H01L 29/0649
H01L 29/0653
H01L 29/1095
H01L 29/41766
H01L 29/78
H01L 29/7802
MCD main class MCM
MCD secondary class MCS H01L 21/336 (2006.01)
H01L 29/06 (2006.01)
H01L 29/10 (2006.01)
H01L 29/78 (2006.01)
MCD additional class MCA H01L 21/265 (2006.01)
57 Abstract AB [DE] Die Erfindung betrifft ein Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper alternierend angeordneten Halbleitergebieten (4, 5) abwechselnd unterschiedlichen Leitungstyps, die sich im Halbleiterkörper (1) von wenigstens einer ersten Zone (6) bis in die Nähe zu einer zweiten Zone (1) erstrecken und durch variable Dotierung aus Trenchen (11, 14) und deren Auffüllung eine elektrisches Feld erzeugen, das einen von beiden Zonen (6, 1) aus ansteigenden Verlauf hat.
[EN] The invention relates to a method for producing a semiconductor component comprising semiconductor areas (4, 5) of different conductivity types which are alternately positioned in a semiconductor body and in said semiconductor body (1) extend at least from one first zone (6) to near a second zone (1) and by way of variable dopage from trenches (11, 14) and their fillings generate an electric field which increases from both said zones (6, 1).
56 Cited documents identified in the search CT DE000004309764A1
US000004754310A
US000005216275A
WO001997029518A1
56 Cited documents indicated by the applicant CT
56 Cited non-patent literature identified in the search CTNP
56 Cited non-patent literature indicated by the applicant CTNP
Citing documents Determine documents
Sequence listings
Search file IPC ICP H01L 21/328
H01L 21/334
H01L 29/06 E
H01L 29/78