54 |
Title |
TI |
[DE] Verfahren zum Herstellen eines Halbleiterbauelements |
71/73 |
Applicant/owner |
PA |
Siemens AG, 80333 München, DE
|
72 |
Inventor |
IN |
Deboy, Gerald, Dr., 82008 Unterhaching, DE
;
Friza, Wolfgang, Dipl.-Ing., Villach, AT
;
Häberlen, Oliver, Dr., Villach, AT
;
Rüb, Michael, Dr., Villach, AT
;
Strack, Helmut, Dr., 80804 München, DE
|
22/96 |
Application date |
AD |
Sep 24, 1998 |
21 |
Application number |
AN |
19843959 |
|
Country of application |
AC |
DE |
|
Publication date |
PUB |
Apr 6, 2000 |
33 31 32 |
Priority data |
PRC PRN PRD |
|
51 |
IPC main class |
ICM |
H01L 21/334
|
51 |
IPC secondary class |
ICS |
H01L 21/328
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01L 21/26586
H01L 29/0619
H01L 29/0623
H01L 29/0634
H01L 29/0649
H01L 29/0653
H01L 29/1095
H01L 29/41766
H01L 29/78
H01L 29/7802
|
|
MCD main class |
MCM |
|
|
MCD secondary class |
MCS |
H01L 21/336
(2006.01)
H01L 29/06
(2006.01)
H01L 29/10
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD additional class |
MCA |
H01L 21/265
(2006.01)
|
57 |
Abstract |
AB |
[DE] Die Erfindung betrifft ein Verfahren zum Herstellen eines Halbleiterbauelements mit in einem Halbleiterkörper alternierend angeordneten Halbleitergebieten (4, 5) abwechselnd unterschiedlichen Leitungstyps, die sich im Halbleiterkörper (1) von wenigstens einer ersten Zone (6) bis in die Nähe zu einer zweiten Zone (1) erstrecken und durch variable Dotierung aus Trenchen (11, 14) und deren Auffüllung eine elektrisches Feld erzeugen, das einen von beiden Zonen (6, 1) aus ansteigenden Verlauf hat. [EN] The invention relates to a method for producing a semiconductor component comprising semiconductor areas (4, 5) of different conductivity types which are alternately positioned in a semiconductor body and in said semiconductor body (1) extend at least from one first zone (6) to near a second zone (1) and by way of variable dopage from trenches (11, 14) and their fillings generate an electric field which increases from both said zones (6, 1). |
56 |
Cited documents identified in the search |
CT |
DE000004309764A1 US000004754310A US000005216275A WO001997029518A1
|
56 |
Cited documents indicated by the applicant |
CT |
|
56 |
Cited non-patent literature identified in the search |
CTNP |
|
56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
H01L 21/328
H01L 21/334
H01L 29/06 E
H01L 29/78
|