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Bibliographic data Document DE000010239868B4 (Pages: 13)
INID	Criterion	Field	Contents
54	Title	TI	[DE] Verfahren zur Erzeugung von tiefen dotierten S�ulenstrukturen in Halbleiterwafern und hierdurch hergestellte Trench-Transistoranordnung
71/73	Applicant/owner	PA	Infineon Technologies AG, 81669 M�nchen, DE
72	Inventor	IN	R�b, Michael, Dr., 9583 Faak am See, AT
22/96	Application date	AD	Aug 29, 2002
21	Application number	AN	10239868
	Country of application	AC	DE
	Publication date	PUB	Dec 29, 2005
33 31 32	Priority data	PRC PRN PRD
51	IPC main class	ICM	H01L 21/336
51	IPC secondary class	ICS	H01L 21/331 H01L 29/739 H01L 29/78
	IPC additional class	ICA
	IPC index class	ICI
	Cooperative patent classification	CPC	H01L 21/261 H01L 29/0634 H01L 29/66333
	MCD main class	MCM
	MCD secondary class	MCS	H01L 21/331 (2006.01) H01L 29/06 (2006.01)
	MCD additional class	MCA	H01L 21/261 (2006.01)
57	Abstract	AB
56	Cited documents identified in the search	CT	DE000019907201A1 US000005426059A US000006103578A WO001997036328A1
56	Cited documents indicated by the applicant	CT
56	Cited non-patent literature identified in the search	CTNP
56	Cited non-patent literature indicated by the applicant	CTNP
	Citing documents		Determine documents
	Sequence listings
	Search file IPC	ICP	H01L 21/331 H01L 21/336 H01L 29/739 H01L 29/78