| 54 |
Title |
TI |
[DE] VERFAHREN UND VORRICHTUNG ZUR ERZEUGUNG VON LASERSTRAHLUNG AUF BASIS VON HALBLEITERN |
| 71/73 |
Applicant/owner |
PA |
UNIV POTSDAM, DE
|
| 72 |
Inventor |
IN |
MENZEL RALF, DE
;
RAAB VOLKER, DE
|
| 22/96 |
Application date |
AD |
Nov 6, 2002 |
| 21 |
Application number |
AN |
02792737 |
|
Country of application |
AC |
AT |
|
Publication date |
PUB |
Apr 15, 2006 |
33
31
32 |
Priority data |
PRC
PRN
PRD |
DE
10161076
20011212
|
| 51 |
IPC main class |
ICM |
H01S 5/14
|
| 51 |
IPC secondary class |
ICS |
|
|
IPC additional class |
ICA |
|
|
IPC index class |
ICI |
|
|
Cooperative patent classification |
CPC |
H01S 3/0818
H01S 5/14
H01S 5/141
H01S 5/142
H01S 5/2036
|
|
MCD main class |
MCM |
|
|
MCD secondary class |
MCS |
H01S 5/022
(2006.01)
H01S 5/14
(2006.01)
|
|
MCD additional class |
MCA |
|
| 57 |
Abstract |
AB |
[EN] In a device and method for generating laser radiation based on semiconductors, with which laser light of a high beam quality can be produced, the device producing laser radiation has a reflective element, which has no influence on the divergence of the light exiting the semiconductor and is placed at a distance from the semiconductor at which the arrangement forms an external unstable resonator, the divergent light exiting the semiconductor. |
| 56 |
Cited documents identified in the search |
CT |
|
| 56 |
Cited documents indicated by the applicant |
CT |
|
| 56 |
Cited non-patent literature identified in the search |
CTNP |
|
| 56 |
Cited non-patent literature indicated by the applicant |
CTNP |
|
|
Citing documents |
|
Determine documents
|
|
Sequence listings |
|
|
|
Search file IPC |
ICP |
|
