Bibliografische Daten

Dokument US020090085064A1 (Seiten: 20)

Bibliografische Daten Dokument US020090085064A1 (Seiten: 20)
INID Kriterium Feld Inhalt
54 Titel TI [EN] HETEROJUNCTION SEMICONDUCTOR DEVICE AND METHOD
71/73 Anmelder/Inhaber PA INFINEON TECHNOLOGIES AUSTRIA, AT
72 Erfinder IN HIRLER FRANZ, DE ; RUEB MICHAEL, AT ; TREU MICHAEL, AT ; WILLMEROTH ARMIN, DE
22/96 Anmeldedatum AD 27.09.2007
21 Anmeldenummer AN 86266107
Anmeldeland AC US
Veröffentlichungsdatum PUB 02.04.2009
33
31
32
Priorität PRC
PRN
PRD


51 IPC-Hauptklasse ICM H01L 29/778 (2006.01)
51 IPC-Nebenklasse ICS H01L 21/336 (2006.01)
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC H01L 29/0634
H01L 29/0878
H01L 29/1095
H01L 29/165
H01L 29/267
H01L 29/41775
H01L 29/66068
H01L 29/7802
MCD-Hauptklasse MCM H01L 29/778 (2006.01)
MCD-Nebenklasse MCS H01L 21/336 (2006.01)
MCD-Zusatzklasse MCA
57 Zusammenfassung AB [EN] A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a lower band-gap than the first band-gap material. A heterojunction is formed between the first semiconductor substrate and the second semiconductor substrate substantially in a first plane. The semiconductor device further includes, in a cross-section which is perpendicular to the first plane, a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type both of which extend from the second semiconductor substrate at least partially into the first semiconductor substrate. The first and second semiconductor regions are spaced in the first semiconductor substrate from each other in a direction parallel to the first plane by a first distance which is arranged in an area proximate to the heterojunction and which is larger than a second distance which is arranged in an area distal to the heterojunction.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt
CT US000005709745A
US000006054352A
56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt
CT
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt
CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt
CTNP
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Sequenzprotokoll
Prüfstoff-IPC ICP H01L 21/336
H01L 29/15
H01L 29/778
H01L 31/0312