| 54 |
Titel |
TI |
[EN] HETEROJUNCTION SEMICONDUCTOR DEVICE AND METHOD |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Erfinder |
IN |
HIRLER FRANZ, DE
;
RUEB MICHAEL, AT
;
TREU MICHAEL, AT
;
WILLMEROTH ARMIN, DE
|
| 22/96 |
Anmeldedatum |
AD |
27.09.2007 |
| 21 |
Anmeldenummer |
AN |
86266107 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
02.04.2009 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/778
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 21/336
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/0634
H01L 29/0878
H01L 29/1095
H01L 29/1608
H01L 29/165
H01L 29/267
H01L 29/41775
H01L 29/66068
H01L 29/7802
|
|
MCD-Hauptklasse |
MCM |
H01L 29/778
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/336
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor device includes a first semiconductor substrate of a first band-gap material and a second semiconductor substrate of a second band-gap material. The second band-gap material has a lower band-gap than the first band-gap material. A heterojunction is formed between the first semiconductor substrate and the second semiconductor substrate substantially in a first plane. The semiconductor device further includes, in a cross-section which is perpendicular to the first plane, a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type both of which extend from the second semiconductor substrate at least partially into the first semiconductor substrate. The first and second semiconductor regions are spaced in the first semiconductor substrate from each other in a direction parallel to the first plane by a first distance which is arranged in an area proximate to the heterojunction and which is larger than a second distance which is arranged in an area distal to the heterojunction. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000005709745A
US000006054352A
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/336
H01L 29/15
H01L 29/778
H01L 31/0312
|
