| 54 |
Titel |
TI |
[EN] SEMICONDUCTOR DEVICE AND METHOD FOR FORMING SAME |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Erfinder |
IN |
ELPELT RUDOLF, DE
;
RUEB MICHAEL, AT
;
RUPP ROLAND, DE
;
TREU MICHAEL, AT
|
| 22/96 |
Anmeldedatum |
AD |
30.07.2007 |
| 21 |
Anmeldenummer |
AN |
83054207 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
05.02.2009 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/808
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 21/266
(2006.01)
H01L 21/337
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 21/0465
H01L 29/1029
H01L 29/66068
H01L 29/66909
H01L 29/8083
|
|
MCD-Hauptklasse |
MCM |
H01L 29/808
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/266
(2006.01)
H01L 21/337
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A method for manufacturing a semiconductor device. The method includes providing a semiconductor body of a conductivity type, wherein the semiconductor body comprises a first surface. At least one buried region of a second conductivity type is formed in the semiconductor body and at least a surface region of the second conductivity type is formed at the first surface of the semiconductor body, wherein the buried region and the surface region are formed such that they are spaced apart from each other. The buried region is formed by deep implantation of a first dopant of the second conductivity type. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000006034385A
US000006459108B1
US000006661042B2
US020070114626A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/265
H01L 21/337
H01L 29/06
H01L 29/78
H01L 29/808
|
