Bibliografische Daten

Dokument US020070069301A1 (Seiten: 9)

Bibliografische Daten Dokument US020070069301A1 (Seiten: 9)
INID Kriterium Feld Inhalt
54 Titel TI [EN] Power transistor
71/73 Anmelder/Inhaber PA INFINEON TECHNOLOGIES AG, DE
72 Erfinder IN RUEB MICHAEL, AT ; SCHMIDT GERHARD, AT
22/96 Anmeldedatum AD 28.09.2006
21 Anmeldenummer AN 52882106
Anmeldeland AC US
Veröffentlichungsdatum PUB 29.03.2007
33
31
32
Priorität PRC
PRN
PRD
DE
102005046427
20050928
51 IPC-Hauptklasse ICM H01L 29/94 (2006.01)
51 IPC-Nebenklasse ICS H01L 29/76 (2006.01)
H01L 31/00 (2006.01)
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC B82Y 10/00
H01L 27/0727
H01L 29/0634
H01L 29/0665
H01L 29/0673
H01L 29/0676
H01L 29/4916
H01L 29/4983
H01L 29/775
H01L 29/7827
H10K 10/466
H10K 85/225
Y10S 977/938
MCD-Hauptklasse MCM H01L 29/94 (2006.01)
MCD-Nebenklasse MCS H01L 29/76 (2006.01)
H01L 31/00 (2006.01)
MCD-Zusatzklasse MCA
57 Zusammenfassung AB [EN] A power transistor has a source region, a drain region, a semiconductor body arranged between the source region and the drain region, and a plurality of nanotubes. The plurality of nanotubes are connected in parallel and disposed in the semiconductor body such that the plurality of nanotubes are electrically insulated from the semiconductor body and electrically connect the source and drain regions of the transistor. The power transistor also includes at least one diode formed in the semiconductor body. A portion of the at least one diode formed in the semiconductor body is configured to act as a gate electrode for the transistor.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt
CT US000006566704B2
US000006740910B2
US000006891191B2
US000006930343B2
US000007180107B2
US000007462890B1
US020040253805A1
56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt
CT
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt
CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt
CTNP
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Sequenzprotokoll
Prüfstoff-IPC ICP H01L 29/76
H01L 29/78
H01L 31/00