54 |
Titel |
TI |
[EN] Power transistor |
71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
72 |
Erfinder |
IN |
RUEB MICHAEL, AT
;
SCHMIDT GERHARD, AT
|
22/96 |
Anmeldedatum |
AD |
28.09.2006 |
21 |
Anmeldenummer |
AN |
52882106 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
29.03.2007 |
33 31 32 |
Priorität |
PRC PRN PRD |
DE
102005046427
20050928
|
51 |
IPC-Hauptklasse |
ICM |
H01L 29/94
(2006.01)
|
51 |
IPC-Nebenklasse |
ICS |
H01L 29/76
(2006.01)
H01L 31/00
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
B82Y 10/00
H01L 27/0727
H01L 29/0634
H01L 29/0665
H01L 29/0673
H01L 29/0676
H01L 29/4916
H01L 29/4983
H01L 29/775
H01L 29/7827
H10K 10/466
H10K 85/225
Y10S 977/938
|
|
MCD-Hauptklasse |
MCM |
H01L 29/94
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 29/76
(2006.01)
H01L 31/00
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
57 |
Zusammenfassung |
AB |
[EN] A power transistor has a source region, a drain region, a semiconductor body arranged between the source region and the drain region, and a plurality of nanotubes. The plurality of nanotubes are connected in parallel and disposed in the semiconductor body such that the plurality of nanotubes are electrically insulated from the semiconductor body and electrically connect the source and drain regions of the transistor. The power transistor also includes at least one diode formed in the semiconductor body. A portion of the at least one diode formed in the semiconductor body is configured to act as a gate electrode for the transistor. |
56 |
Entgegengehaltene Patentdokumente/Zitate, in Recherche ermittelt |
CT |
US000006566704B2 US000006740910B2 US000006891191B2 US000006930343B2 US000007180107B2 US000007462890B1 US020040253805A1
|
56 |
Entgegengehaltene Patentdokumente/Zitate, vom Anmelder genannt |
CT |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, in Recherche ermittelt |
CTNP |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, vom Anmelder genannt |
CTNP |
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Sequenzprotokoll |
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Prüfstoff-IPC |
ICP |
H01L 29/76
H01L 29/78
H01L 31/00
|