| 54 |
Titel |
TI |
[EN] Lateral MISFET and method for fabricating it |
| 71/73 |
Anmelder/Inhaber |
PA |
RUEB MICHAEL
;
SCHMITT MARKUS
;
TOLKSDORF CAROLIN
;
WAHL UWE
;
WILLMEROTH ARMIN
|
| 72 |
Erfinder |
IN |
RUEB MICHAEL, AT
;
SCHMITT MARKUS, DE
;
TOLKSDORF CAROLIN, DE
;
WAHL UWE, DE
;
WILLMEROTH ARMIN, DE
|
| 22/96 |
Anmeldedatum |
AD |
14.03.2006 |
| 21 |
Anmeldenummer |
AN |
27678206 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
23.11.2006 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102005012217
20050315
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/76
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/0619
H01L 29/0696
H01L 29/782
H01L 29/7825
|
|
MCD-Hauptklasse |
MCM |
H01L 29/76
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A lateral MISFET having a semiconductor body has a doped semiconductor substrate of a first conduction type and an epitaxial layer of a second conduction type, which is complementary to the first conduction type, the epitaxial layer being provided on the semiconductor substrate. This MISFET has, on the top side of the semiconductor body, a drain, a source, and a gate electrode with gate insulator. A semiconductor zone of the first conduction type is embedded in the epitaxial layer in a manner adjoining the gate insulator, a drift zone of the second conduction type being arranged between the semiconductor zone and the drain electrode in the epitaxial layer. The drift zone has pillar-type regions which are arranged in rows and columns and whose boundary layers have a metal layer which in each case forms a Schottky contact with the material of the drift zone. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000004412376A
US000004482907A
US000004831423A
US000004881979A
US000005111254A
US000005629543A
US000006194755B1
US000006326656B1
US000006707088B2
US000006787872B2
US020040222461A1
US020050082610A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 29/00
H01L 29/06 E
H01L 29/78
|
