| 54 |
Titel |
TI |
[EN] Process for patterning capacitor structures in semiconductor trenches |
| 71/73 |
Anmelder/Inhaber |
PA |
RUEB MICHAEL
|
| 72 |
Erfinder |
IN |
RUEB MICHAEL, AT
|
| 22/96 |
Anmeldedatum |
AD |
09.11.2005 |
| 21 |
Anmeldenummer |
AN |
27028205 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
08.06.2006 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102004054352
20041109
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/94
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/66181
H10B 12/0387
|
|
MCD-Hauptklasse |
MCM |
H01L 29/94
(2006.01)
H10B 12/00
(2023.01)
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A process for producing structures in a semiconductor zone, has the steps of a) producing a trench ( 2 ) in the semiconductor zone ( 18 ), b) filling the trench with a photoresist ( 19 ), and c) exposing the photoresist ( 19 ) using ion beams ( 20 ), d) developing the photoresist ( 19 ). The energy density and ion dose for the ion beams ( 20 ) are selected in such a way that the photoresist ( 19 ) is only chemically changed at defined depths, so as to produce two regions, in the first region ( 21 ) of which the photoresist has been chemically changed at the defined depths by the ion beams ( 20 ), and in the second region of which the photoresist has been left chemically unchanged, so that during the developing step the photoresist is removed in precisely one of the two regions. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000004673962A
US000004871688A
US000004905065A
US000005394000A
US000005593908A
US000006552382B1
US000006573558B2
US000006608350B2
US000006723611B2
US020030016569A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 27/08 CF
H01L 29/06
H01L 29/78
|
