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Dokument US020040007735A1 (Seiten: 16)

Bibliografische Daten Dokument US020040007735A1 (Seiten: 16)
INID Kriterium Feld Inhalt
54 Titel TI [EN] High-voltage semiconductor component
71/73 Anmelder/Inhaber PA AHLERS DIRK ; DEBOY GERALD ; RUEB MICHAEL ; STRACK HELMUT ; WEBER HANS MARTIN
72 Erfinder IN AHLERS DIRK, DE ; DEBOY GERALD, DE ; RUEB MICHAEL, AT ; STRACK HELMUT, DE ; WEBER HANS MARTIN, AT
22/96 Anmeldedatum AD 06.06.2003
21 Anmeldenummer AN 45583903
Anmeldeland AC US
Veröffentlichungsdatum PUB 15.01.2004
33
31
32
Priorität PRC
PRN
PRD
DE
19840032
02.09.1998
33
31
32
PRC
PRN
PRD
DE
9901218
22.04.1999
33
31
32
PRC
PRN
PRD
US
78602201
09.11.2001
51 IPC-Hauptklasse ICM H01L 29/76
51 IPC-Nebenklasse ICS
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC H01L 29/0634
H01L 29/0696
H01L 29/1095
H01L 29/41766
H01L 29/4232
H01L 29/4236
H01L 29/4238
H01L 29/772
H01L 29/7801
H01L 29/7802
H01L 29/7811
H01L 29/7816
H01L 29/7825
MCD-Hauptklasse MCM
MCD-Nebenklasse MCS H01L 21/336 (2006.01)
H01L 29/06 (2006.01)
H01L 29/78 (2006.01)
MCD-Zusatzklasse MCA H01L 29/417 (2006.01)
H01L 29/423 (2006.01)
57 Zusammenfassung AB [EN] A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt
CT US000003171068A
US000003925803A
US000003961356A
US000004003072A
US000004055884A
US000004072975A
US000004101922A
US000004145700A
US000004320410A
US000004345265A
US000004366495A
US000004376286A
US000004404575A
US000004417385A
US000004561003A
US000004593302A
US000004748103A
US000004754310A
US000004775881A
US000004777149A
US000004895810A
US000004914058A
US000004926226A
US000004941026A
US000004974059A
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US000004994871A
US000005008725A
US000005010025A
US000005019522A
US000005045903A
US000005072269A
US000005089434A
US000005126807A
US000005182234A
US000005216275A
US000005231474A
US000005283201A
US000005340315A
US000005438215A
US000005473180A
US000005559353A
US000005648283A
US000005747831A
US000005801417A
US000005883411A
US000005973360A
US000006037631A
US000006291856B1
US000006667514B2
US020010050549A1
US020010053568A1
56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt
CT
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt
CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt
CTNP
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Sequenzprotokoll
Prüfstoff-IPC ICP H01L 29/76
H01L 29/78