54 |
Titel |
TI |
[EN] High-voltage semiconductor component |
71/73 |
Anmelder/Inhaber |
PA |
AHLERS DIRK
;
DEBOY GERALD
;
RUEB MICHAEL
;
STRACK HELMUT
;
WEBER HANS MARTIN
|
72 |
Erfinder |
IN |
AHLERS DIRK, DE
;
DEBOY GERALD, DE
;
RUEB MICHAEL, AT
;
STRACK HELMUT, DE
;
WEBER HANS MARTIN, AT
|
22/96 |
Anmeldedatum |
AD |
06.06.2003 |
21 |
Anmeldenummer |
AN |
45583903 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
15.01.2004 |
33 31 32 |
Priorität |
PRC PRN PRD |
DE
19840032
02.09.1998
|
33 31 32 |
PRC PRN PRD |
DE
9901218
22.04.1999
|
33 31 32 |
PRC PRN PRD |
US
78602201
09.11.2001
|
51 |
IPC-Hauptklasse |
ICM |
H01L 29/76
|
51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/0634
H01L 29/0696
H01L 29/1095
H01L 29/41766
H01L 29/4232
H01L 29/4236
H01L 29/4238
H01L 29/772
H01L 29/7801
H01L 29/7802
H01L 29/7811
H01L 29/7816
H01L 29/7825
|
|
MCD-Hauptklasse |
MCM |
|
|
MCD-Nebenklasse |
MCS |
H01L 21/336
(2006.01)
H01L 29/06
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
H01L 29/417
(2006.01)
H01L 29/423
(2006.01)
|
57 |
Zusammenfassung |
AB |
[EN] A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone. |
56 |
Entgegengehaltene Patentdokumente/Zitate, in Recherche ermittelt |
CT |
US000003171068A US000003925803A US000003961356A US000004003072A US000004055884A US000004072975A US000004101922A US000004145700A US000004320410A US000004345265A US000004366495A US000004376286A US000004404575A US000004417385A US000004561003A US000004593302A US000004748103A US000004754310A US000004775881A US000004777149A US000004895810A US000004914058A US000004926226A US000004941026A US000004974059A US000004975782A US000004994871A US000005008725A US000005010025A US000005019522A US000005045903A US000005072269A US000005089434A US000005126807A US000005182234A US000005216275A US000005231474A US000005283201A US000005340315A US000005438215A US000005473180A US000005559353A US000005648283A US000005747831A US000005801417A US000005883411A US000005973360A US000006037631A US000006291856B1 US000006667514B2 US020010050549A1 US020010053568A1
|
56 |
Entgegengehaltene Patentdokumente/Zitate, vom Anmelder genannt |
CT |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, in Recherche ermittelt |
CTNP |
|
56 |
Entgegengehaltene Nichtpatentliteratur/Zitate, vom Anmelder genannt |
CTNP |
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Zitierende Dokumente |
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Dokumente ermitteln
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Sequenzprotokoll |
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Prüfstoff-IPC |
ICP |
H01L 29/76
H01L 29/78
|