Bibliografische Daten

Dokument US020030232477A1 (Seiten: 16)

Bibliografische Daten Dokument US020030232477A1 (Seiten: 16)
INID Kriterium Feld Inhalt
54 Titel TI [EN] High-voltage semiconductor component
71/73 Anmelder/Inhaber PA AHLERS DIRK ; DEBOY GERALD ; RUEB MICHAEL ; STRACK HELMUT ; WEBER HANS MARTIN
72 Erfinder IN AHLERS DIRK, DE ; DEBOY GERALD, DE ; RUEB MICHAEL, AT ; STRACK HELMUT, DE ; WEBER HANS MARTIN, AT
22/96 Anmeldedatum AD 06.06.2003
21 Anmeldenummer AN 45585803
Anmeldeland AC US
Veröffentlichungsdatum PUB 18.12.2003
33
31
32
Priorität PRC
PRN
PRD
US
78602201
20011109
51 IPC-Hauptklasse ICM H01L 21/336
51 IPC-Nebenklasse ICS
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC H01L 29/0634
H01L 29/0696
H01L 29/41766
H01L 29/4232
H01L 29/4238
H01L 29/7801
H01L 29/7802
H01L 29/7811
H01L 29/7816
MCD-Hauptklasse MCM
MCD-Nebenklasse MCS H01L 29/06 (2006.01)
H01L 29/78 (2006.01)
MCD-Zusatzklasse MCA H01L 29/417 (2006.01)
H01L 29/423 (2006.01)
57 Zusammenfassung AB [EN] A process for manufacturing of a semiconductor device comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, comprises the step of: varying in individual semiconductor layers, by doping, the degree of compensation in the regions of the second conductivity type.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt
CT US000003171068A
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56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt
CT
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt
CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt
CTNP
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Sequenzprotokoll
Prüfstoff-IPC ICP H01L 21/336 V
H01L 29/78