| 54 |
Titel |
TI |
[EN] Power transistor |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Erfinder |
IN |
RUEB MICHAEL, AT
;
SCHMIDT GERHARD, AT
|
| 22/96 |
Anmeldedatum |
AD |
28.09.2006 |
| 21 |
Anmeldenummer |
AN |
52882106 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
18.08.2009 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102005046427
20050928
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 21/8238
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
B82Y 10/00
H10D 30/43
H10D 30/63
H10D 62/111
H10D 62/118
H10D 62/121
H10D 62/122
H10D 64/661
H10D 64/671
H10D 84/811
H10K 10/466
H10K 85/225
Y10S 977/938
|
|
MCD-Hauptklasse |
MCM |
H01L 21/8238
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] A power transistor has a source region, a drain region, a semiconductor body arranged between the source region and the drain region, and a plurality of nanotubes. The plurality of nanotubes are connected in parallel and disposed in the semiconductor body such that the plurality of nanotubes are electrically insulated from the semiconductor body and electrically connect the source and drain regions of the transistor. The power transistor also includes at least one diode formed in the semiconductor body. A portion of the at least one diode formed in the semiconductor body is configured to act as a gate electrode for the transistor. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000006566704B2
US000006740910B2
US000006930343B2
US000007180107B2
US000007462890B1
US020040253805A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
DE000010324752A1
DE102004003374A1
US000006891191B2
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 29/78
|
