| 54 |
Titel |
TI |
[EN] Method for fabricating a semiconductor component |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AUSTRIA, AT
|
| 72 |
Erfinder |
IN |
HIRLER FRANZ, DE
;
MAUDER ANTON, DE
;
PFIRSCH FRANK, DE
;
PIPPAN MANFRED, AT
;
RUEB MICHAEL, AT
;
RUPP ROLAND, DE
;
SCHAEFER HERBERT, DE
;
SCHULZE HANS-JOACHIM, DE
;
SEDLMAIER STEFAN, DE
;
WEBER HANS, DE
;
WILLMEROTH ARMIN, DE
|
| 22/96 |
Anmeldedatum |
AD |
29.09.2006 |
| 21 |
Anmeldenummer |
AN |
54092206 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
02.12.2008 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102005046711
20050929
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 21/336
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 21/76224
H01L 29/0653
H01L 29/165
H01L 29/66734
H01L 29/7804
H01L 29/7813
H01L 29/7849
|
|
MCD-Hauptklasse |
MCM |
H01L 21/336
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] The fabrication of a semiconductor component having a semiconductor body in which is arranged a very thin dielectric layer having sections which run in the vertical direction and which extend very deeply into the semiconductor body is disclosed. In one method a trench is formed in a drift zone region proceeding from the front side of a semiconductor body, a sacrificial layer is produced on at least a portion of the sidewalls of the trench and at least a portion of the trench is filled with a semiconductor material which is chosen such that the quotient of the net dopant charge of the semiconductor material in the trench and the total area of the sacrificial layer on the sidewalls of the trench between the semiconductor material and the drift zone region is less than the breakdown charge of the semiconductor material, and the sacrificial layer is replaced with a dielectric. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US020030186507A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
DE000010214175A1
US000003345222A
US000006927101B2
WO002002067332A2
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
Bell et al., "Porous Silicon as a Sacrificial Material," Journal of Micromechanics and Microengineering, Jun. 1996, pp. 361-369. 1;
Gösele et al., "Porous Silicon Etch-Release layer," from Science and Technology of Semiconductor Wafer Bonding (not yet published but found on the web at http://www.duke.edu/web/wbl/bondbk.html). 2 pages. 1;
Siffert et al., "Silicon- Evolution and Future Technology," Springer-Verlag Berlin Heidelberg 2004, pp. 159-162 and attending references. 1
|
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Prüfstoff-IPC |
ICP |
H01L 21/336
H01L 29/78
|
