| 54 |
Titel |
TI |
[EN] Integrated semiconductor circuit having a logic and power metallization without intermetal dielectric |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Erfinder |
IN |
DETZEL THOMAS, AT
;
RUEB MICHAEL, AT
|
| 22/96 |
Anmeldedatum |
AD |
18.01.2005 |
| 21 |
Anmeldenummer |
AN |
3727305 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
07.11.2006 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
102004003538
20040123
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/00
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 23/52
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 23/528
H01L 23/5283
H01L 29/41741
H01L 29/41758
H01L 29/456
H01L 29/7801
H01L 29/7802
H01L 2924/0002
|
|
MCD-Hauptklasse |
MCM |
H01L 29/00
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/336
(2006.01)
H01L 21/768
(2006.01)
H01L 23/522
(2006.01)
H01L 23/528
(2006.01)
H01L 23/52
(2006.01)
H01L 31/113
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
H01L 29/417
(2006.01)
H01L 29/45
(2006.01)
H01L 29/78
(2006.01)
|
| 57 |
Zusammenfassung |
AB |
[EN] An integrated semiconductor circuit having a first and a second portion of a substrate, in which a power semiconductor circuit structure and a logic circuit structure are respectively formed. The metallization having a power metal layer and an in relative terms thinner logic metal layer, the two metal layers being located directly above one another in this order, without an intermetal dielectric between them, only in the first portion above the power semiconductor circuit structure, and an uninterrupted conductive barrier layer being located at least between the power metal layer and the intermediate oxide layer and also between the power metal layer and the contact regions and electrode portions of the power semiconductor circuit structure which it contact-connects, and to a method for fabricating it. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000004807007A
US000006020640A
US020010018257A1
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
US000004718977A
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
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Prüfstoff-IPC |
ICP |
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