| 54 |
Titel |
TI |
[EN] Method for doping a semiconductor body |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Erfinder |
IN |
RUEB MICHAEL, AT
|
| 22/96 |
Anmeldedatum |
AD |
23.12.2003 |
| 21 |
Anmeldenummer |
AN |
74593303 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
15.08.2006 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
10260644
20021223
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 21/425
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 21/263
H01L 21/26506
H01L 21/268
|
|
MCD-Hauptklasse |
MCM |
H01L 21/425
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/265
(2006.01)
H01L 21/268
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
|
| 57 |
Zusammenfassung |
AB |
[EN] The invention relates to a method for doping a semiconductor body ( 2 ), in which an n-type doping is introduced into the semiconductor body, which is initially p-doped, for example, by means of ion irradiation preferably with protons, which n-type doping is then cancelled by the action of a laser beam ( 8 ) in specific regions ( 9 ) so that the original p-type doping is present in said regions ( 9 ). |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000004522657A
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
DE000010018371A1
DE000010025567A1
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/425
|
