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Dokument US000006894329B2 (Seiten: 19)

Bibliografische Daten Dokument US000006894329B2 (Seiten: 19)
INID Kriterium Feld Inhalt
54 Titel TI [EN] High-voltage semiconductor component
71/73 Anmelder/Inhaber PA INFINEON TECHNOLOGIES AG, DE
72 Erfinder IN AHLERS DIRK, DE ; DEBOY GERALD, DE ; RUEB MICHAEL, AT ; STRACK HELMUT, DE ; WEBER HANS MARTIN, AT
22/96 Anmeldedatum AD 06.06.2003
21 Anmeldenummer AN 45583903
Anmeldeland AC US
Veröffentlichungsdatum PUB 17.05.2005
33
31
32
Priorität PRC
PRN
PRD
DE
19840032
02.09.1998
33
31
32
PRC
PRN
PRD
DE
9901218
22.04.1999
33
31
32
PRC
PRN
PRD
US
78602201
09.11.2001
51 IPC-Hauptklasse ICM H01L 29/80
51 IPC-Nebenklasse ICS
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC H01L 29/0634
H01L 29/0696
H01L 29/1095
H01L 29/41766
H01L 29/4232
H01L 29/4236
H01L 29/4238
H01L 29/772
H01L 29/7801
H01L 29/7802
H01L 29/7811
H01L 29/7816
H01L 29/7825
MCD-Hauptklasse MCM
MCD-Nebenklasse MCS H01L 21/336 (2006.01)
H01L 29/06 (2006.01)
H01L 29/78 (2006.01)
MCD-Zusatzklasse MCA H01L 29/417 (2006.01)
H01L 29/423 (2006.01)
57 Zusammenfassung AB [EN] A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone.
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