| 54 |
Titel |
TI |
[EN] Method for manufacturing a semiconductor component |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Erfinder |
IN |
DEBOY GERALD, DE
;
FRIZA WOLFGANG, AT
;
HAEBERLEN OLIVER, AT
;
RUEB MICHAEL, AT
;
STRACK HELMUT, DE
|
| 22/96 |
Anmeldedatum |
AD |
26.03.2001 |
| 21 |
Anmeldenummer |
AN |
81759401 |
|
Anmeldeland |
AC |
US |
|
Veröffentlichungsdatum |
PUB |
18.11.2003 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
19843959
24.09.1998
|
33
31
32 |
PRC
PRN
PRD |
DE
9903081
24.09.1999
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 21/338
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 21/8236
H01L 21/8242
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 21/26586
H01L 29/0619
H01L 29/0623
H01L 29/0634
H01L 29/0649
H01L 29/0653
H01L 29/1095
H01L 29/41766
H01L 29/78
H01L 29/7802
|
|
MCD-Hauptklasse |
MCM |
|
|
MCD-Nebenklasse |
MCS |
H01L 21/336
(2006.01)
H01L 29/06
(2006.01)
H01L 29/10
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
H01L 21/265
(2006.01)
|
| 57 |
Zusammenfassung |
AB |
[EN] The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
US000005021355A
US000005384152A
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
DE000004309764A1
DE000019736981A1
US000005216275A
US000005438215A
WO001997029518A1
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
Chen Xingbi: "Theory of a Novel Voltage Sustaning (CB) Layer for Power Devices", Chinese Journal of Electronics, vol. 7, No. 3, Jul. 1998, pp. 211-216. 1
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 21/336
|
