| 54 |
Titel |
TI |
[EN] METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG
|
| 72 |
Erfinder |
IN |
DEBOY GERALD
;
STRACK HELMUT
;
HAEBERLEN OLIVER
;
RUEB MICHAEL
;
FRIZA WOLFGANG
|
| 22/96 |
Anmeldedatum |
AD |
24.03.2001 |
| 21 |
Anmeldenummer |
AN |
20017003803 |
|
Anmeldeland |
AC |
KR |
|
Veröffentlichungsdatum |
PUB |
09.08.2001 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
19843959
24.09.1998
|
33
31
32 |
PRC
PRN
PRD |
DE
9903081
24.09.1999
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/78
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 21/26586
H01L 29/0619
H01L 29/0623
H01L 29/0634
H01L 29/0649
H01L 29/0653
H01L 29/1095
H01L 29/41766
H01L 29/78
H01L 29/7802
|
|
MCD-Hauptklasse |
MCM |
|
|
MCD-Nebenklasse |
MCS |
H01L 21/336
(2006.01)
H01L 29/06
(2006.01)
H01L 29/10
(2006.01)
H01L 29/78
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
H01L 21/265
(2006.01)
|
| 57 |
Zusammenfassung |
AB |
[EN] The invention relates to a method for producing a semiconductor component comprising semiconductor areas (4, 5) of different conductivity types which are alternately positioned in a semiconductor body and in said semiconductor body (1) extend at least from one first zone (6) to near a second zone (1) and by way of variable dopage from trenches (11, 14) and their fillings generate an electric field which increases from both said zones (6, 1). © KIPO & WIPO 2007 |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
|
