| 54 |
Titel |
TI |
[DE] HOCHSPANNUNGS-HALBLEITERBAUELEMENT
[EN] HIGH-VOLTAGE SEMICONDUCTOR COMPONENT
[FR] ELEMENT SEMI-CONDUCTEUR HAUTE TENSION |
| 71/73 |
Anmelder/Inhaber |
PA |
INFINEON TECHNOLOGIES AG, DE
|
| 72 |
Erfinder |
IN |
AHLERS DIRK, DE
;
DEBOY GERALD, DE
;
GRAF HEIMO, AT
;
RUEB MICHAEL, AT
;
STENGL JENS-PEER, DE
;
STRACK HELMUT, DE
;
WEBER HANS, DE
|
| 22/96 |
Anmeldedatum |
AD |
22.04.1999 |
| 21 |
Anmeldenummer |
AN |
99929017 |
|
Anmeldeland |
AC |
EP |
|
Veröffentlichungsdatum |
PUB |
26.07.2006 |
33
31
32 |
Priorität |
PRC
PRN
PRD |
DE
19840032
02.09.1998
|
33
31
32 |
PRC
PRN
PRD |
DE
9901218
22.04.1999
|
| 51 |
IPC-Hauptklasse |
ICM |
H01L 29/78
(2006.01)
|
| 51 |
IPC-Nebenklasse |
ICS |
H01L 21/336
(2006.01)
H01L 29/06
(2006.01)
|
|
IPC-Zusatzklasse |
ICA |
|
|
IPC-Indexklasse |
ICI |
|
|
Gemeinsame Patentklassifikation |
CPC |
H01L 29/0634
H01L 29/0696
H01L 29/1095
H01L 29/41766
H01L 29/4232
H01L 29/4236
H01L 29/4238
H01L 29/772
H01L 29/7801
H01L 29/7802
H01L 29/7811
H01L 29/7816
H01L 29/7825
|
|
MCD-Hauptklasse |
MCM |
H01L 29/78
(2006.01)
|
|
MCD-Nebenklasse |
MCS |
H01L 21/336
(2006.01)
H01L 29/06
(2006.01)
|
|
MCD-Zusatzklasse |
MCA |
H01L 29/417
(2006.01)
H01L 29/423
(2006.01)
|
| 57 |
Zusammenfassung |
AB |
[EN] A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone. |
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt |
CT |
|
| 56 |
Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt |
CT |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt |
CTNP |
|
| 56 |
Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt |
CTNP |
|
|
Zitierende Dokumente |
|
Dokumente ermitteln
|
|
Sequenzprotokoll |
|
|
|
Prüfstoff-IPC |
ICP |
H01L 29/80
|
