Bibliografische Daten

Dokument EP000001114466A1 (Seiten: 1)

Bibliografische Daten Dokument EP000001114466A1 (Seiten: 1)
INID Kriterium Feld Inhalt
54 Titel TI [DE] HOCHSPANNUNGS-HALBLEITERBAUELEMENT
[EN] HIGH-VOLTAGE SEMICONDUCTOR COMPONENT
[FR] ELEMENT SEMI-CONDUCTEUR HAUTE TENSION
71/73 Anmelder/Inhaber PA SIEMENS AG, DE
72 Erfinder IN AHLERS DIRK, DE ; DEBOY GERALD, DE ; GRAF HEIMO, AT ; RUEB MICHAEL, AT ; STENGL JENS-PEER, DE ; STRACK HELMUT, DE ; WEBER HANS, DE
22/96 Anmeldedatum AD 22.04.1999
21 Anmeldenummer AN 99929017
Anmeldeland AC EP
Veröffentlichungsdatum PUB 11.07.2001
33
31
32
Priorität PRC
PRN
PRD
DE
19840032
02.09.1998
33
31
32
PRC
PRN
PRD
DE
9901218
22.04.1999
51 IPC-Hauptklasse ICM H01L 29/78
51 IPC-Nebenklasse ICS H01L 21/336
H01L 29/06
IPC-Zusatzklasse ICA
IPC-Indexklasse ICI
Gemeinsame Patentklassifikation CPC H01L 29/0634
H01L 29/0696
H01L 29/1095
H01L 29/41766
H01L 29/4232
H01L 29/4236
H01L 29/4238
H01L 29/772
H01L 29/7801
H01L 29/7802
H01L 29/7811
H01L 29/7816
H01L 29/7825
MCD-Hauptklasse MCM
MCD-Nebenklasse MCS H01L 21/336 (2006.01)
H01L 29/06 (2006.01)
H01L 29/78 (2006.01)
MCD-Zusatzklasse MCA H01L 29/417 (2006.01)
H01L 29/423 (2006.01)
57 Zusammenfassung AB [EN] A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.
56 Entgegengehaltene Patentdokumente/Zitate,
in Recherche ermittelt
CT
56 Entgegengehaltene Patentdokumente/Zitate,
vom Anmelder genannt
CT
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
in Recherche ermittelt
CTNP
56 Entgegengehaltene Nichtpatentliteratur/Zitate,
vom Anmelder genannt
CTNP
Zitierende Dokumente Dokumente ermitteln
Sequenzprotokoll
Prüfstoff-IPC ICP H01L 29/80